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Concept of Force Variation Due to Charged Defects in Elemental and Compound Semiconductors
Author(s) -
Vandevyver M.,
Talwar D. N.,
Plumelle P.,
Kunc K.,
Zigone M.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220990234
Subject(s) - coulomb , impurity , semiconductor , range (aeronautics) , compound semiconductor , electric field , variation (astronomy) , cadmium telluride photovoltaics , condensed matter physics , chemical physics , materials science , chemistry , nanotechnology , physics , quantum mechanics , optoelectronics , electron , epitaxy , organic chemistry , layer (electronics) , astrophysics , composite material
Abstract Green's function calculations of force variation due to charged impurities in elemental and compound semiconductors are analysed on the basis of simple physical arguments. It is strongly suggested that the trends of force variation may not be related with the long range Coulomb interactions, however, the important criteria should be the effect of electric field of charged impurity on its nearest neighbour bonds that mainly affects the short range couplings. Some new experimental results by i.r. method due to Si and Cl impurities in CdTe are also included that lend additional justification to the arguments.