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Many‐Particle Effects at the E 1 ‐Transition in Silicon
Author(s) -
Jungk G.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220990224
Subject(s) - singularity , dielectric function , particle (ecology) , dielectric , silicon , function (biology) , spectral line , type (biology) , second derivative , materials science , condensed matter physics , molecular physics , analytical chemistry (journal) , computational physics , physics , atomic physics , chemistry , mathematics , quantum mechanics , mathematical analysis , optoelectronics , oceanography , chromatography , evolutionary biology , biology , geology , ecology
The ellipsometric determination of the dielectric function of Si around the controversial 3.4 eV optical structure yields at least three critical points at 3.34, 3.41, and 3.58 eV with types M 0 , M 1 and M 0 , respectively. The exact lineshape fit of the energy‐derivative spectra shows that the M 1 ‐type singularity is modified by many‐particle effects, which can be accounted for by an admixture of M 2 ‐type lineshape.