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Electronic Raman Scattering of Polarized Light on Donor Levels in Semiconductors with Direct Band Gaps
Author(s) -
Ba An Nguyen,
Van Hieu Nguyen,
Toan Thang Nguyen,
Ai Viet Nguyen
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220990223
Subject(s) - degenerate energy levels , semiconductor , valence band , raman scattering , atomic physics , direct and indirect band gaps , band gap , valence (chemistry) , photon , physics , raman spectroscopy , photon energy , scattering , condensed matter physics , molecular physics , optics , optoelectronics , quantum mechanics
Explicite approximate analytical expressions are derived for the differential cross sections of the electronic Raman scattering of circularly polarized light on donor levels with the electronic transition 1s → 2s in semiconductors with zincblende structure and direct band gaps. The photon energies are assumed to be nearly equal to the band gap and therefore the intermediate states in the valence bands give dominant contributions. The real symmetry properties of the degenerate valence bands are taken into account. The absolute values of the cross sections are calculated for GaAs.