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On the Electronic g ‐Faetor in n‐Type Silicon Inversion Layers
Author(s) -
Englert Th.,
von Klitzing K.,
Nicholas R. J.,
Landwehr G.,
Dorda G.,
Pepper M.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220990123
Subject(s) - landau quantization , condensed matter physics , magnetic field , quantum hall effect , coincidence , physics , maxima , filling factor , perpendicular , inversion (geology) , quantum mechanics , geometry , mathematics , art , performance art , art history , medicine , paleontology , alternative medicine , pathology , structural basin , biology
The tilted field method is used to measure the coincidence of spin‐split Landau levels of different Landau quantum numbers in (100) n‐type silicon inversion layers. At constant magnetic field perpendicular to the surface the peak values of Shubnikov‐de Haas oscillations are analyzed as a function of the tilt angle ϕ, where ϕ is the angle between the surface normal and the magnetic field. Pronounced maxima of s̀ xx for Corbino devices and of s̀ xx for Hall devices are found at the coincidence condition. The electronic g ‐factor determined from the coincidence is substantially larger than the bulk value contrary to a recent publication, where experimental evidence for g = 2 was claimed. It is also shown that the Hall component does not falsify the results when the angular dependence of the resistivity maxima is investigated at constant total magnetic fields for a fixed Landau quantum number.