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Theory of Core Excitons in Semiconductors
Author(s) -
Bechstedt F.,
Endeblein R.,
Koch M.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220990104
Subject(s) - exciton , wannier function , core (optical fiber) , mott transition , binding energy , semiconductor , condensed matter physics , isotropy , conduction band , electron , dielectric , physics , atomic physics , quantum mechanics , hubbard model , superconductivity , optics
Core exciton binding energies are calculated for the Ga 3d‐X 6 conduction band transition inGa‐V compounds and the Si 2p‐Δ 6 transition in Si. Various corrections to the Wannier‐Mott theory are considered. Realistic core hole charge distributions, q ‐ and ω‐dependent dielectric screening and an‐isotropic electron effective masses are taken into account. In the case of Ga‐V compounds, binding energies from the calculation are considerably larger than the Wannier‐Mott values, and close to experimental data. Smaller changes result for Si. The large discrepancies between theory and experiment cannot be resolved in this case.