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New Mechanism of Electric Field Influence on Defect Creation in Non‐Metallic Crystals
Author(s) -
Chaika G. E.,
Vinetskii V. L.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220980238
Subject(s) - impurity , atom (system on chip) , electron , atomic physics , adiabatic process , condensed matter physics , electric field , atomic electron transition , quantum , lattice (music) , electron density , materials science , molecular physics , chemistry , physics , quantum mechanics , spectral line , computer science , acoustics , embedded system
The mechanism of radiation defect creation in crystals below threshold is considered. Such defects may be due to impurity atoms capable of occurring at intersites, the latter being acceptors. The probability of lattice site–intersite transition for an impurity atom is calculated by statistical and quantum mechanical methods. This transition is accompanied by band electron (hole) capturing at the level of the created defect. When calculating by quantum mechanical methods the impurity atomic mass is supposed to be smaller than those of the host atoms. Such an assumption enables one to apply the adiabatic approximation twice: host atoms–impurity atom–electron. The upper value of the above transition probability corresponds to an electron energy level higher than the band minimum. Thus the heating by an electric field (or, perhaps, by the light of a discrete spectrum), causing the electron density to increase in the high energy tail region, may enhance appreciably the defect creation efficiency.