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Plasma Reflection and Magnetoreflection in Epitaxial Graded‐Gap Cd x Hg 1− x Te Layers
Author(s) -
Dudziak E.,
Jędral L.,
Brzezińki J.,
Becla P.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220980229
Subject(s) - epitaxy , homogeneous , semiconductor , analytical chemistry (journal) , reflectivity , reflection (computer programming) , chemistry , position (finance) , materials science , condensed matter physics , crystallography , optics , physics , optoelectronics , layer (electronics) , nanotechnology , finance , chromatography , computer science , economics , thermodynamics , programming language
Measurements of reflectivity and magnetoreflectivity in the region of the plasma edge are performed at 300 K on n‐type graded‐gap epitaxial Cd x Hg 1– x Te layers. From these measurements the position‐dependent effective masses and concentrations of free carriers are determined in the semimetallic region ( x < 0.1) and for small composition gradient (≦ 10 −3 μm −1 ). It is found that the position‐dependent effective masses determined by combined reflectivity and magnetoreflectivity measurements in the examined graded‐gap Cd x Hg 1– x Te, at least within experimental error limits, are the same as in homogeneous Cd x Hg 1– x Te crystals with the respective composition x . This result is discussed in the light of the recent effective mass theory for carriers in graded mixed semiconductors.