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Gain Spectrum of an e–h Liquid in Direct Gap Semiconductors
Author(s) -
Haug H.,
Thoai D. B. Tran
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220980220
Subject(s) - degenerate energy levels , semiconductor , spectrum (functional analysis) , plasma , atomic physics , electron , exciton , physics , condensed matter physics , materials science , optoelectronics , quantum mechanics
The gain spectrum of a degenerate electron–hole plasma for direct gap semiconductors is calculated as a function of the density and the temperature of the electronic excitations. The calculation contains the collision broadening in the single‐particle self‐energies and the excitonic enhancement due to the attractive electron–hole interaction in the plasma. For the example of GaAs the numerically calculated spectrum is shown to fit the experimentally determined spectrum.