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Hot Electron Effects in Semiconductor Luminescence
Author(s) -
Dean P. J.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220980206
Subject(s) - photoexcitation , exciton , luminescence , phonon , atomic physics , electron , ionization , excitation , spontaneous emission , semiconductor , recombination , doping , condensed matter physics , physics , chemistry , optoelectronics , excited state , laser , optics , quantum mechanics , ion , biochemistry , gene
Fine structure near the threshold for recombination of free holes at neutral donors in InP is attributed to the radiative decay of excitons weakly bound at ionized donors. The conditions for optimum development of this optical structure are discussed; dilute doping, low temperature, and optical excitation rates and photoexcitation energies close to the direct energy gap. It is argued that the separation of electrons and holes and the intense local generation of phonons which occurs when this latter criterion is strongly violated favours free particle rather than bound exciton recombination processes. Comparisons are drawn with the behaviour of an unusual green photo‐luminescence spectrum in ZnSe, where the transition probability seems strongly enhanced by promoting phonons although very weak coupling is exhibited to accepting phonons.