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Molecular Liquid Model and Electronic Structure of Amorphous Silicon and Germanium
Author(s) -
Halder N. C.,
Shenoy S. R.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220970225
Subject(s) - pseudopotential , structure factor , germanium , materials science , amorphous solid , electronic structure , silicon , simple (philosophy) , perturbation theory (quantum mechanics) , amorphous silicon , k nearest neighbors algorithm , coordination number , total energy , condensed matter physics , statistical physics , molecular physics , crystallography , physics , chemistry , computer science , quantum mechanics , crystalline silicon , optoelectronics , ion , psychology , philosophy , epistemology , artificial intelligence , displacement (psychology) , psychotherapist
The atomic and electronic structure of amorphous Si and Ge are investigated by the molecular liquid model (MLM). The theoretical structure factor is calculated using simple parameters — nearest neighbor distance, packing density, and coordination number. The electronic density of states obtained with the MLM structure factor, and nonlocal energy dependent pseudopotential in second order perturbation theory, show good agreement with experimental and other theoretical results.