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Lifetime of Charge Carriers in Intrinsic Indium Antimonide
Author(s) -
Bruhns H.,
Kruse H.
Publication year - 1980
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220970113
Subject(s) - indium antimonide , photoconductivity , magnetic field , electric field , charge carrier , auger , condensed matter physics , plasma , electron , atomic physics , field (mathematics) , physics , carrier lifetime , transverse plane , materials science , optoelectronics , silicon , mathematics , quantum mechanics , pure mathematics , structural engineering , engineering
The lifetime of additional photoinjected electron—hole pairs in intrinsic InSb at 291 K is investigated by measuring the photoconductive (PC) decay. Apart from studying the usual PC‐decay an arrangement is used with superimposed magnetic field transverse to the electric field. Depending on the direction of the magnetic field the photoinjected plasma is either driven into the sample's bulk or travels parallel to the illuminated surface. The Auger‐lifetime is evaluated from the measurements by a numerical magnetohydrodynamical simulation taking into account surface recombination as well as the Suhl profile of the intrinsic plasma. A lifetime of τ = (57 ± 3) ns is found which is independent of the magnetic field up to 2.3 T.