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Model pseudopotential for elementary semiconductors
Author(s) -
Mašović D. R.,
Zeković S.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220960151
Subject(s) - pseudopotential , bessel function , semiconductor , condensed matter physics , band gap , simple (philosophy) , electronic band structure , physics , energy (signal processing) , quantum mechanics , philosophy , epistemology
A simple model pseudopotential, particularly suitable for energy band calculations in elementary semiconductors, is presented. It includes the Veljković‐Slavić's general model pseudopotential and phenomenological correction. This correction represents a sum of spherical Bessel functions of higher order with the coefficients obtained by fitting the form factor of the pseudopotential to the experimental values of the transition energies around the energy gap. The band structures of Si, Ge, and α‐Sn are calculated and agree well with the experimental data. This pseudopotential is tested by calculating the resistivity of liquid Si, Ge, and Sn.