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Flux redistribution of channeled fast electrons
Author(s) -
Popov D. E.,
Kaplin V. V.,
Vorobiev S. A.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220960127
Subject(s) - redistribution (election) , electron , planar , atomic physics , materials science , flux (metallurgy) , transmission electron microscopy , physics , nuclear physics , nanotechnology , computer graphics (images) , politics , political science , computer science , law , metallurgy
The orientation dependence of planar channeling for 0.5 to 2.5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.