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Experimental evidence for piezoelectrical free‐carrier scattering by screw dislocations in tellurium
Author(s) -
Estienne J. P.,
Farvacque J. L.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220950231
Subject(s) - tellurium , free carrier , scattering , materials science , condensed matter physics , conductivity , electron mobility , hall effect , charge carrier density , piezoelectricity , electrical resistivity and conductivity , optics , chemistry , composite material , physics , metallurgy , doping , quantum mechanics
Hall effect and conductivity measurements are performed, in the case of tellurium, on samples containing a high density of a screw dislocations and on reference samples. Comparison of these measurements shows that a screw dislocations are responsible for a strong free carrier mobility decrease. A discussion of the results, based on theoretical calculations of the free carrier mobility permits to conclude to a piezoelectric scattering mechanism.