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Temperature dependence of electron concentration in intrinsic‐like HgTe
Author(s) -
Szlenk K.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220950214
Subject(s) - electron , conductivity , thermal conduction , acceptor , hall effect , chemistry , valence band , conduction band , condensed matter physics , electrical resistivity and conductivity , valence (chemistry) , ionization , electron mobility , magnetic field , atmospheric temperature range , ionization energy , analytical chemistry (journal) , materials science , band gap , ion , physics , thermodynamics , organic chemistry , chromatography , quantum mechanics , composite material
Measurement of the Hall effect and the conductivity are performed on HgTe sample characterized by an electron mobility of 10 6 cm 2 /Vs at 1.6 K. The range of temperatures investigated is 1.6 to 32 K and the external magnetic field covers the region 50 to 800 G. The interpretation of the data based on the conductivity tensor components analysis shows that the sample contains 5 × 10 16 cm −3 acceptors. The acceptor ionization energy is estimated to be 2 meV. It is shown that a simple one‐carrier expression for the Hall constant may give wrong results for the electron concentration, differing by a factor of two from the correct value. From the behaviour of conduction electron concentration below 6 K it is found that the conduction–valence band overlap is smaller than 0.3 meV.