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Evidence for a landé‐factor g =2 in n‐type inverted silicon MOSFET surfaces
Author(s) -
Köhler H.,
Roos M.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220950112
Subject(s) - silicon , type (biology) , line (geometry) , physics , cyclotron , series (stratigraphy) , mosfet , energy (signal processing) , g factor , field (mathematics) , spin (aerodynamics) , electric field , basis (linear algebra) , condensed matter physics , computational physics , magnetic field , mathematics , atomic physics , geometry , quantum mechanics , voltage , pure mathematics , optoelectronics , geology , paleontology , transistor , thermodynamics
The determination of the spin splitting in quantities of the cyclotron energy in quantizing electric and magnetic fields from the application of the “tilted field method” on n‐type inverted silicon MOSFET surfaces is re‐examined under the additional consideration of a finite valley splitting. The procedure shows up to be very complicated since various important parameters and their angular variation are not known exactly. The summary of a series of different experiments yields an almost equal number of differing results for the g ‐factor evaluated from the particular cases for M * == g · m c /(2 m 0 cos ξ) =1/2 and 1, even after an exact correction of the data. The assumption of an interaction of the two “inner” of the four broadened levels belonging to a Landau quantum number n and a modification of the line shapes in their interspace allows a complete discussion of all data on the basis of a g ‐factor equal to 2.