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Electronic structure and optical properties of AlP, AlAs, and AlSb
Author(s) -
Sarkar R. L.,
Chatterjee S.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220940236
Subject(s) - interpolation (computer graphics) , semiconductor , band gap , electronic band structure , electronic structure , conjunction (astronomy) , absorption (acoustics) , materials science , binding energy , condensed matter physics , scheme (mathematics) , chemistry , computational chemistry , physics , optoelectronics , atomic physics , optics , mathematics , mathematical analysis , classical mechanics , motion (physics) , astronomy
The composite wave variational version of the APW method is used in conjunction with the semiempirical tight‐binding interpolation scheme to obtain the electronic band structure and optical absorption characteristics of the compounds AlP, AlAs, and AlSb. The results show that all these materials are indirect band gap semiconductors. The overall feature of the energy bands and the optical characteristics agree fairly well with existing theoretical and experimental results. The implication of the interpolation parameters is also emphasised.