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Single‐site theory of Wannier excitons in disordered semiconductors. I. General considerations
Author(s) -
Fischbeck H. J.,
Strehlow R.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220940216
Subject(s) - coulomb , wannier function , exciton , semiconductor , physics , wave function , vertex (graph theory) , condensed matter physics , quantum mechanics , mathematics , electron , combinatorics , graph
Starting from the general theory of interacting disordered systems a Bethe‐Salpeter equation is derived which describes Wannier excitons in disordered semiconductors. It contains both the Coulomb and the disorder vertex. The former is taken in the static v s approximation whereas the latter is derived from a single‐site approximation. Replacing the Coulomb vertex by an approximate product kernel this equation can be solved. An expression for the imaginary part of the dielectric function is obtained which is accessible to numerical evaluations.