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Calculations on the properties of helium in silicon
Author(s) -
Kaplan D. R.,
Weigel C.,
Corbett J. W.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220940204
Subject(s) - helium , silicon , diffusion , lattice (music) , materials science , tetrahedron , atomic physics , effective diffusion coefficient , condensed matter physics , chemistry , thermodynamics , physics , crystallography , optoelectronics , medicine , radiology , acoustics , magnetic resonance imaging
The electronic properties, lattice location, and diffusion coefficient of helium are investigated in silicon by extended Hückel theory calculations. The electrical properties are unchanged, the helium sits in the tetrahedral interstitial position, and the calculated diffusion coefficient is (1.28 ± 0.11) × 10 −3 cm 2 s −1 exp (− 1.8 eV/ kT ).