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Electronic polarization (relaxation) effects in the core level spectra of semiconductors. I. General theory of electronic polarization (relaxation) in semiconductors
Author(s) -
Bechstedt F.,
Enderlein R.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220940127
Subject(s) - polarization (electrochemistry) , semiconductor , dielectric , electron , relaxation (psychology) , spectral line , condensed matter physics , physics , atomic physics , materials science , chemistry , quantum mechanics , psychology , social psychology
Abstract The core electron binding energies of semiconductors cannot correctly be described without taking into account of polarization (relaxation) energies due to the core hole. A formula is developed which relates the polarization energy to the dielectric function ϵ( q , ω) of the semiconductor. Band structure effects and the dynamics of polarization are considered. An approximate expression for ϵ( q , ω) is derived which can be shown to give a reasonable description for the relevant q ‐ and ω‐regions. The theory represents the basis for the calculation of polarization energies in terms of only a few experimental parameters. The numerical results are given in the forthcoming paper (II).