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On the theory of the complex dielectric function of a heavily doped degenerate semiconductor
Author(s) -
Quang Doan Nhat,
Esser B.,
Keiper R.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220940112
Subject(s) - degenerate energy levels , condensed matter physics , semiconductor , dielectric function , doping , dielectric , impurity , singularity , logarithm , degenerate semiconductor , function (biology) , anderson impurity model , physics , quantum mechanics , mathematics , mathematical analysis , evolutionary biology , biology
Starting from the Kubo formula the interband part of the complex dielectric function (DF) of a heavily doped degenerate semiconductor is calculated. In the real part of the interband DF a logarithmic singularity is obtained which is smoothed by the random impurity potential into a peak of a finite height. The peak is located at the energy of Burstein‐Moss shift of the imaginary part of the interband DF. The height of the peak is connected with the r.m.s. of the impurity potential fluctuations and particularly an estimate of the impurity concentration might be possible from its measurement.