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The exciton‐neutral donor and biexciton complexes in polar semiconductors
Author(s) -
Mokross F.,
Büttner H.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220940111
Subject(s) - biexciton , exciton , hamiltonian (control theory) , semiconductor , phonon , binding energy , polar , physics , atomic physics , chemistry , condensed matter physics , quantum mechanics , mathematics , mathematical optimization
For a system of two different excitons interacting with LO‐phonons an effective Hamiltonian is derived. As a special example the exciton‐neutral donor binding energy is calculated using a variational procedure and discussed as a function of m e m h for different material parameters. The results are also compared to those of other authors and to experimental data. Corresponding calculations are done for the biexciton complex.