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LO Phonon Raman Lineshape in Highly Excited GaAs
Author(s) -
Turtelli R. S.,
de Castro A. R. B.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220930241
Subject(s) - phonon , excited state , raman spectroscopy , condensed matter physics , atomic physics , line (geometry) , materials science , lattice (music) , physics , optics , geometry , mathematics , acoustics
It is shown that the LO phonon Raman line in bulk GaAs excited with pulsed IR radiation of high intensity is shifted, broadened, and distorted. The TO line is not affected. These phenomena cannot be explained by trivial lattice heating but are quantitatively accounted for by invoking mixing of the LO phonons with photo‐excited carrier collective modes.