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Ground and Excited States of the Biexciton and the M‐Band Luminescence in Highly Excited ZnO
Author(s) -
Schrey H.,
Klingshirn C.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220930226
Subject(s) - excited state , biexciton , exciton , atomic physics , excitation , ground state , luminescence , binding energy , raman scattering , molecular physics , physics , raman spectroscopy , condensed matter physics , optics , quantum mechanics
Additional measurements on polarization properties and excitation intensity dependence are presented for the resonant two‐photon Raman scattering via biexcitons in highly excited ZnO at low temperatures reported earlier [1]. The binding energy of the biexciton ground state (symmetry Λ 1 ) is determined to (19 ± 0.2) meV. An excited biexciton state (symmetry Λ 5 ) is observed for the first time in II‐VI compounds. Moreover, the excitation spectra of the M‐band and of the bound exciton I 9 are given for different polarizations of the exciting light. They indicate that the M‐band can be ascribed to a superposition of extrinsic and intrinsic recombination processes.