Certain Features of Semiconductor Behaviour in Strong Parallel Magnetic and Electric Fields III. Interband Absorption | Zendy

Berezhkovskii A. M. | Zendy; Ovchinnikov A. A. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Certain Features of Semiconductor Behaviour in Strong Parallel Magnetic and Electric Fields III. Interband Absorption

Author(s) -

Berezhkovskii A. M.,

Ovchinnikov A. A.

Publication year - 1979

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220930212

Subject(s) - equidistant , maxima , semiconductor , absorption (acoustics) , magnetic field , electric field , energy (signal processing) , condensed matter physics , energy spectrum , physics , atomic physics , optics , quantum mechanics , mathematics , geometry , art , art history , performance art

It is shown that under certain conditions the absorption spectrum of a semiconductor placed into strong parallel magnetic and electric fields transforms from a continuous into a discrete and equidistant form with energy intervals between the adjacent absorption maxima equal to the energy of a Wannier‐Stark ladder step.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research