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Certain Features of Semiconductor Behaviour in Strong Parallel Magnetic and Electric Fields III. Interband Absorption
Author(s) -
Berezhkovskii A. M.,
Ovchinnikov A. A.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220930212
Subject(s) - equidistant , maxima , semiconductor , absorption (acoustics) , magnetic field , electric field , energy (signal processing) , condensed matter physics , energy spectrum , physics , atomic physics , optics , quantum mechanics , mathematics , geometry , art , art history , performance art
It is shown that under certain conditions the absorption spectrum of a semiconductor placed into strong parallel magnetic and electric fields transforms from a continuous into a discrete and equidistant form with energy intervals between the adjacent absorption maxima equal to the energy of a Wannier‐Stark ladder step.