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Electron Scattering by a Layer of Dislocation Lines in a Semiconductor
Author(s) -
Gerlach E.,
Kluttig H.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220930151
Subject(s) - dislocation , condensed matter physics , perpendicular , semiconductor , scattering , anisotropy , plasmon , plane (geometry) , materials science , electron , optics , physics , geometry , optoelectronics , mathematics , quantum mechanics
If dislocation lines are arranged periodically in a plane, the dc and the dynamical transport properties may become anisotropic around a single dislocation. The ratio of the resistivities for transport parallel and perpendicular to the plane are calculated using the energy loss method. Geometrical resonances appearing in the plasmon and in the power law regime are explained in terms of Bragg reflections by the periodic arrangement.