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Phonon Scattering at a Low‐Angle Grain Boundary in Silicon
Author(s) -
Roth E. P.,
Anderson A. C.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220930131
Subject(s) - phonon , grain boundary , scattering , silicon , phonon scattering , condensed matter physics , materials science , boundary (topology) , thermal , optics , physics , composite material , microstructure , optoelectronics , thermodynamics , mathematics , mathematical analysis
The propagation of ballistic thermal phonons through a single low‐angle grain boundary in pure silicon is observed at equivalent temperatures of 2 to 20 K. No scattering of phonons by the boundary can be detected.