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TO Phonon–Helicon Coupling in Polar Semiconductors
Author(s) -
Sato K.,
Kobayashi M.,
Iwabuchi S.,
Yokota I.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220930108
Subject(s) - helicon , semiconductor , phonon , polar , faraday cage , coupling (piping) , condensed matter physics , cyclotron resonance , physics , doppler effect , resonance (particle physics) , faraday effect , atomic physics , cyclotron , materials science , magnetic field , optoelectronics , quantum mechanics , metallurgy
TO‐phonons coupled with helicons in a polar semiconductor are studied in detail in the Faraday configuration by the method of Green's functions technique, and are numerically analyzed for n‐InSb in two cases when the crossing would occur in‐ and out‐of‐Doppler shifted cyclotron resonance region, respectively.