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On the static conductivity of a heavily doped semiconductor
Author(s) -
Arbuzov Yu. D.,
Evdokimov V. M.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220920230
Subject(s) - conductivity , doping , semiconductor , condensed matter physics , relaxation (psychology) , scattering , impurity , born approximation , materials science , electrical resistivity and conductivity , statistical physics , physics , optoelectronics , quantum mechanics , psychology , social psychology
It is shown that the static conductivity of a heavily doped semiconductor may be obtained in terms of a transport relaxation time. Not only the term of Born's approximation is regained in the framework of the assumptions made but as well the terms associated with the scattering by two impurities are taken into account. The relevant correction to the static conductivity is calculated.