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Temperature‐dependent density of states of n‐GaAs
Author(s) -
Lamfried W. H.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220920211
Subject(s) - impurity , density of states , range (aeronautics) , condensed matter physics , doping , atmospheric temperature range , activation energy , materials science , energy (signal processing) , atomic physics , physics , chemistry , thermodynamics , quantum mechanics , composite material
The electronic density of states for nonzero temperature is calculated using the model of shortranged impurity potentials. The investigated impurity densities are limited by the maximum value n 1 at which the impurity‐to‐band activation energy becomes zero. It is shown that in the case of n‐GaAs, both classical statistics and the RPA are applicable in a wide range of temperature to such doping. Thus it is possible to incorporate the screening into the model and to calculate the density of states, the activation energy, the screening, and the chemical potential in a self‐consistent manner.