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Anomalous magnetoresistance and band crossing in uniaxially compressed HgTe
Author(s) -
Takita K.,
Onabe K.,
Tanaka S.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220920135
Subject(s) - condensed matter physics , magnetoresistance , magnetic field , hall effect , materials science , electrical resistivity and conductivity , effective mass (spring–mass system) , band gap , landau quantization , acceptor , physics , quantum mechanics
Resistivity at helium temperatures of uniaxially compressed slightly p‐type HgTe decreases greatly by application of a magnetic field along the stress direction. It increases again above a certain magnetic field H M showing a large resistance minimum. The minimum position H M increases proportionally to the applied compression. These properties are investigated using a magnetic field up to 55 kOe under a uniaxial compression up to about 7 × 10 8 dyn/cm 2 . By comparison with the magnetic sub‐band scheme calculated by the effective mass theory, it is concluded that the resistance minimum is due to a band‐crossing H M between the lowest Landau levels of the conduction and the valence bands. A second band‐crossing point is also observed by using a magnetic field modulation technique. A shear deformation potential constant of the Γ 8 ‐band b is deduced; b = (−1.5 ± 0.2) eV. Further, an acceptor impurity band in the stress‐induced band gap is found by the analysis of the temperature dependence of weak field Hall coefficient.