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First and second order Raman scattering by pair modes in silicon
Author(s) -
Jouanne M.,
Morhange J. F.,
Balkanski M.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220920129
Subject(s) - raman scattering , silicon , raman spectroscopy , scattering , x ray raman scattering , impurity , order (exchange) , ion , molecular physics , atomic physics , chemistry , materials science , physics , optics , optoelectronics , quantum mechanics , finance , economics
Ion implanted silicon with two types of impurities is studied using Raman scattering. The splitting of the localized modes into two pair modes is observed. In the case of 10 B 31 P pairs the two modes are ω ∥ = 650 cm −1 , ω ⊥ = 620 cm −1 , and for 11 B 31 P pairs, ω ∥ = 628 cm −1 , ω ⊥ = 605 cm −1 . Results for BAs pairs in silicon are also reported. It is believed that for the first time the second order Raman scattering by pair modes is observed. The second order spectrum gives information about the density of states of these modes.