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On the deformation model of the carrier spectrum for bismuth‐type crystals II. Holes
Author(s) -
Jung T.,
Braune W.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220920119
Subject(s) - brillouin zone , bismuth , deformation (meteorology) , spectrum (functional analysis) , electron , dispersion (optics) , condensed matter physics , materials science , geometry , physics , optics , mathematics , quantum mechanics , composite material , metallurgy
A decisive advantage of the deformation theory of the carrier spectrum in bismuth — the consistent description of electrons at the L‐points and holes at the T‐points of the Brillouin zone — is pointed out. Deficiencies of the model which are specific for the dispersion in the vicinity of T‐points are analysed. An extended form of the deformation theory is presented and applied to bismuth data. A much better agreement with experimental data is obtained, demonstrating the efficiency of the deformation method.