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Surface states on Si(lll) 7 × 7 studied by low‐energy electron loss spectroscopy
Author(s) -
Lieske N.,
Hezel R.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220920118
Subject(s) - auger electron spectroscopy , electron energy loss spectroscopy , atomic physics , spectroscopy , low energy electron diffraction , surface states , electron spectroscopy , electron , spectral line , energy dispersive x ray spectroscopy , electron diffraction , chemistry , materials science , diffraction , surface (topology) , scanning electron microscope , physics , optics , geometry , mathematics , quantum mechanics , astronomy , nuclear physics , composite material
The clean Si(lll) 7 × 7 surface is studied by low‐energy electron diffraction (LEED), Auger electron spectroscopy (AES), and low‐energy electron loss spectroscopy (ELS). For primary energies up to 100 eV the ELS spectra show more characteristic loss peaks than the spectra published until now. The spectra are interpreted using the dielectric model, the density‐of‐states model, and the interband excitation model applied to the surface energy band structure calculated by Pandey and Phillips. As a result the majority of the characteristic energy losses are due to electron interband transitions from filled surface states into empty surface or volume states. In contrast to that, most of the observed loss peaks for higher primary energies, as demonstrated for 400 eV, can be interpreted as interband transitions from volume to volume states.