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Force–force correlation function approach to the electrical resistivity of disordered transition metal alloys
Author(s) -
Goedsche F.,
Richter R.,
Vojta G.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910224
Subject(s) - electrical resistivity and conductivity , scattering , condensed matter physics , tin , operator (biology) , binary number , physics , materials science , mathematics , quantum mechanics , chemistry , metallurgy , biochemistry , arithmetic , repressor , transcription factor , gene
The method of the force‐force correlation functions is used to derive, beyond the weak scattering approximation, a tractable approximative formula for the electrical resistivity of disordered binary alloys. The starting point is a one‐particle expression for the resistivity formulated in terms of the total scattering operator T . The local approximation is introduced by replacing the T operator by the atomic t matrices in order to treat transition metal alloys described by muffin‐tin single‐particle Hamiltonians. Short‐range multiple‐scattering corrections to the local approximation are evaluated using a non‐selfconsistent single‐site average‐ t ‐matrix approximation. Explicit results are given and discussed for the resistivity of a one‐dimensional muffin‐tin model for transition‐metal‐like alloys with resonant states.