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First‐order NPO scattering in semiconductors drift mobility and hall factor
Author(s) -
Heinrich A.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910223
Subject(s) - scattering , condensed matter physics , phonon scattering , hall effect , boltzmann equation , semiconductor , electron mobility , physics , filling factor , phonon , lattice (music) , chemistry , quantum mechanics , electrical resistivity and conductivity , acoustics
The drift mobility and the Hall factor are calculated for the nonpolar optical (NPO) scattering in first order of the phonon wave vector by the numerical solution of the linearized Boltzmann equation. This scattering mechanism was recently suggested to be the dominant lattice scattering in chalcopyrite semiconductors. The drift mobility shows a strong temperature dependence with a high temperature behaviour of T −5/2 . The Hall factor r is approximately proportional to T 0.53 over the whole considered temperature region. Consequently the usual approximation r = 1 is poor in the case of this scattering mechanism. For n‐ZnSiP 2 an analysis is given of the lattice limited Hall mobility. The relevance of the first order NPO scattering in other than chalcopyrite semiconductors is discussed.