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Linear optical response of highly excited semiconductors electron–hole liquid in CdS
Author(s) -
Müller G. O.,
Weber H. H.,
Höricke I.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910218
Subject(s) - excited state , semiconductor , nanosecond , materials science , optics , spectral line , absorption spectroscopy , excitation , atomic physics , optoelectronics , physics , laser , quantum mechanics , astronomy
A thorough investigation of highly excited direct gap semiconductors requires determination of optical constants within the duration of the nanosecond excitation period. A simultaneous recording of reflection and transmission (and probing) spectra is possible by virtue of the multiple track mode of PAR's OMA. Interfacing to a computer and use of classical optics allow for an on‐line absolute calibration. The absolute values of absorption and refraction spectra of highly excited CdS are indicative of an electron–hole liquid with a chemical potential of about 2.537 eV and a density of about 3 × 10 18 cm −3 .