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Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperatures
Author(s) -
Asche M.,
Kostial H.,
Sarbey O. G.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910217
Subject(s) - recombination , excited state , atomic physics , electron , electric field , auger effect , ionization , impact ionization , scattering , cascade , phonon , auger , chemistry , condensed matter physics , physics , ion , nuclear physics , optics , biochemistry , organic chemistry , quantum mechanics , chromatography , gene
The concentration of electrons and the decay time of carriers additionally excited from the donor states are measured in dependence on the electric field strength in n‐Si in the temperature region of partial freezing out. From these data the parameters characterizing the processes of phonon assisted and impact ionization and recombination are determined. It is shown that at not too low temperatures the Auger recombination and the impact ionization at weak electric field strength are noticeable and are determined by the contribution of the highly excited states of the donors. The phonon assisted recombination is described by the improved model of the cascade process including intervalley scattering of the electrons.