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The electrical conductivity of bismuth chalcogenides in the liquid state
Author(s) -
Satow T.,
Uemura O.,
Sanzyo M.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910137
Subject(s) - electrical resistivity and conductivity , bismuth , conductivity , impurity , materials science , doping , stoichiometry , analytical chemistry (journal) , metal , valence (chemistry) , condensed matter physics , chemistry , metallurgy , physics , optoelectronics , organic chemistry , chromatography , electrical engineering , engineering
Abstract The electrical conductivities of liquid BiTe and BiSe systems are measured as a function of temperature. Plots of the electrical conductivity and its temperature derivative versus composition for liquid BiTe system give a relatively smooth curve near the stoichiometric composition of Bi 2 Te 3 . The electrical conductivity of the liquid BiSe system is considerably small compared with liquid BiTe system. The temperature dependence of the electrical conductivity indicates that the liquid BiSe system becomes metallic rapidly with increasing Bi content beyond the composition of Bi 2 Se 3 . The impurity doping (Bi, Ga, and In) effects are investigated on Bi 2 Se 3 melt using both the electrical conductivity and the magnetic susceptibility. The results of Bi‐doped melts suggest that a complete ionization occurs of the excess Bi atoms, whereas an appreciable non‐localization of valence electrons is seen in alloys containing excess Ga and In atoms.