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Quantitative determination of the valley splitting in n‐type inverted silicon (100) MOSFET surfaces
Author(s) -
Köhler H.,
Roos M.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910124
Subject(s) - magnetic field , tilt (camera) , condensed matter physics , position (finance) , maxima and minima , silicon , mosfet , range (aeronautics) , sample (material) , physics , energy (signal processing) , computational physics , voltage , materials science , geometry , transistor , optoelectronics , quantum mechanics , mathematics , mathematical analysis , finance , economics , composite material , thermodynamics
Shubnikov‐de Haas oscillations including an abrupt phase shift of the extrema position at a critical magnetic field are reproduced by computer simulation allowing a quantitative evaluation of the spin and valley splittings Δ s and Δ v with a high accuracy. Varying the gate voltage and tilt angle of a sample in the magnetic field data are obtained over a wide field range. The computer simulation also permits to check the assumptions about the magnetic field dependence of the energy width and the shape of the broadened levels in quantizing magnetic and electric fields. The results obtained for Δ s and Δ v both depend on the history of even the same sample.