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Burstein‐Moss effect and near‐band‐edge luminescence spectrum of highly doped indium arsenide
Author(s) -
Vilkotskii V. A.,
Domanevskii D. S.,
Kakanakov R. D.,
Krasovskii V. V.,
Tkachev V. D.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910106
Subject(s) - band gap , luminescence , acceptor , materials science , doping , direct and indirect band gaps , enhanced data rates for gsm evolution , spectral line , atomic physics , molecular physics , optoelectronics , condensed matter physics , chemistry , physics , telecommunications , astronomy , computer science
The shape of near‐band‐edge luminescence spectrum is studied and a quantitative analysis of the Burstein‐Moss shift in the three band approximation of Kane's theory is carried out. It is shown experimentally that with increasing electron concentration the spectrum maximum is shifted towards the high‐energy region up to 0.7 eV. At the high‐energy side of spectrum a kink is observed, and at the low‐energy side, an emission maximum at 0.39 to 0.40 eV. The calculations show that the spectrum shape may be described by indirect transitions: band–band and band–shallow acceptor. The narrowing of the optical band gap is accounted for a better agreement between the experimental and theoretical spectra.