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Study of the charge exchange process of iron impurity atoms in GaAs and GaP by Mössbauer spectroscopy
Author(s) -
Seregin P. P.,
Nasredinov F. S.,
Bakhtiyarov A. Sh.
Publication year - 1979
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220910103
Subject(s) - impurity , mössbauer spectroscopy , atom (system on chip) , band gap , spectroscopy , materials science , population , gallium , electron , analytical chemistry (journal) , valence (chemistry) , valence electron , atomic physics , chemistry , crystallography , metallurgy , physics , demography , optoelectronics , organic chemistry , chromatography , quantum mechanics , sociology , computer science , embedded system
The iron impurity atom state in GaAs and GaP is studied by emission Mössbauer spectroscopy. The iron atoms substitute for gallium atoms and have a tetrahedral surrounding. The electron configuration for a neutral state of these centres (Fe)° is 3d 5 4s 0.52 p 1.56 (in GaAs) or 3d 5 4s 0.79 p 2.37 (in GaP), while in the ionized state the population of the 3d shell of iron is increased (3d 6 ). The process of fast electron exchange via the valence band between the (Fe)° and (Fe) − centres at 295 K is observed in slightly overcompensated GaP. For E (Fe) – E (Co) a value of – (0.035 ± 0.002)eV is obtained where E (Fe) and E (Co) are the iron and cobalt levels in GaP, respectively.