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Optical constants of n‐ and p‐type GaAs between 2.5 and 3.5 eV
Author(s) -
Vigil E.,
Rodríguez J. A.,
Alvarez R. Pérez
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220900146
Subject(s) - refractive index , attenuation coefficient , reflectivity , kramers–kronig relations , spectral line , impurity , range (aeronautics) , absorption (acoustics) , analytical chemistry (journal) , materials science , type (biology) , spectral analysis , optics , chemistry , physics , optoelectronics , spectroscopy , organic chemistry , chromatography , quantum mechanics , astronomy , composite material , ecology , biology
The normal incidence reflectance for n‐ and p‐type GaAs is measured at room temperature in the spectral range from 1.2 to 3.8 eV. Using Kramers‐Kronig analysis, the values of the refractive index and absorption coefficient for n‐ and p‐type GaAs are determined from the reflectance data in the spectral range from 2.5 to 3.5 eV. The results obtained show that the optical‐constant spectra depend on impurity concentration in the spectral range investigated.