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Influence of band‐tail parameters on electronic specific heat and transport coefficients in heavily doped semiconductors
Author(s) -
van Cong H.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220900145
Subject(s) - semiconductor , doping , materials science , condensed matter physics , thermal , function (biology) , thermodynamics , optoelectronics , physics , evolutionary biology , biology
The high density and low temperature dependences of the electronic specific heat and of the electronic and thermal transport coefficients are investigated for a simplified model of heavily doped semiconductors. The theoretical treatments are based on a Green's function method which was developed in preceding paper. A brief comparison with existing experiments on n‐Ge, n‐Si, and n‐GaAs is made and discussed.