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ESR from boron in silicon at zero and small external stress. II. Linewidth and crystal defects
Author(s) -
Neubrand H.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220900133
Subject(s) - laser linewidth , silicon , boron , impurity , crystallographic defect , materials science , condensed matter physics , zero (linguistics) , stress (linguistics) , acceptor , crystal (programming language) , zero point energy , oxygen , molecular physics , atomic physics , chemistry , optics , physics , metallurgy , laser , linguistics , philosophy , organic chemistry , quantum mechanics , computer science , programming language
Observations of the ESR lineshape of the shallow acceptor centre B in silicon at zero external stress are reported. The broadening of two Δ M = 1 transitions can be well fitted by a Voigt profile. The Lorentzian part of the fit is shown to behave in full accordance with the theory of strain broadening by point defects. From linewidth measurements for different oxygen and carbon content the elastic strengths of oxygen and carbon in silicon are determined. All obtainable elastic strengths for point defects in silicon are collected. The possibility of determining the total amount of substitutional impurities from the Lorentzian broadening of the Δ M = 1 transitions is discussed.