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Electron beam excited free exciton luminescence of GaSe
Author(s) -
Schwabe R.,
Thuselt F.,
Hänsel T.,
Lévy F.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220900125
Subject(s) - exciton , cathodoluminescence , luminescence , biexciton , excited state , semiconductor , recombination , atomic physics , electron , dissociation (chemistry) , materials science , molecular physics , condensed matter physics , optoelectronics , chemistry , physics , biochemistry , quantum mechanics , gene
On the layered semiconductor GaSe low temperature cathodoluminescence experiments are performed. Both, the temperature dependence of the free exciton luminescence and kinetical considerations lead to the conclusion that the GaSe band structure causes a peculiar temperature dependence of the exciton band population. The latter is established as a balance between recombination, the formation of excitons from holes and direct or indirect electrons, as well as dissociation of excitons.