Exchange Interaction of Manganese 3d 5  States with Band Electrons in Cd 1− x  Mn x Te | Zendy

Gaj J. A. | Zendy; Ginter J. | Zendy; Gałązka R. R. | Zendy

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Exchange Interaction of Manganese 3d 5 States with Band Electrons in Cd 1− x Mn x Te

Author(s) -

Gaj J. A.,

Ginter J.,

Gałązka R. R.

Publication year - 1978

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2220890241

Subject(s) - condensed matter physics , electron , ternary operation , paramagnetism , quasi fermi level , semimetal , manganese , ion , semiconductor , band gap , exciton , magnetic semiconductor , direct and indirect band gaps , chemistry , valence (chemistry) , magnetic field , valence electron , exchange interaction , atomic physics , physics , ferromagnetism , organic chemistry , quantum mechanics , computer science , programming language

The influence of a system of magnetic‐field‐aligned paramagnetic ions on the conduction and valence band electron states is studied. A model applicable to large‐gap semiconductors is presented, in which the direct influence of a magnetic field on the band electron states is neglected. This assumption allows to calculate the E ( k ) dependence in the presence of a magnetic field. The calculations are performed in the Kohn‐Luttinger model producing a strongly anisotropic and nonparabolic structure. As an illustration of the obtained results measurements of the exciton reflection structure in a magnetic field are presented on the ternary semiconductor CdMnTe. The ratio of the exchange integrals of conduction band electrons and valence band electrons to manganese ions is estimated to α/β = −0.25.

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