Premium
Exchange Interaction of Manganese 3d 5 States with Band Electrons in Cd 1− x Mn x Te
Author(s) -
Gaj J. A.,
Ginter J.,
Gałązka R. R.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220890241
Subject(s) - condensed matter physics , electron , ternary operation , paramagnetism , quasi fermi level , semimetal , manganese , ion , semiconductor , band gap , exciton , magnetic semiconductor , direct and indirect band gaps , chemistry , valence (chemistry) , magnetic field , valence electron , exchange interaction , atomic physics , physics , ferromagnetism , organic chemistry , quantum mechanics , computer science , programming language
The influence of a system of magnetic‐field‐aligned paramagnetic ions on the conduction and valence band electron states is studied. A model applicable to large‐gap semiconductors is presented, in which the direct influence of a magnetic field on the band electron states is neglected. This assumption allows to calculate the E ( k ) dependence in the presence of a magnetic field. The calculations are performed in the Kohn‐Luttinger model producing a strongly anisotropic and nonparabolic structure. As an illustration of the obtained results measurements of the exciton reflection structure in a magnetic field are presented on the ternary semiconductor CdMnTe. The ratio of the exchange integrals of conduction band electrons and valence band electrons to manganese ions is estimated to α/β = −0.25.