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On the Theory of Resonance Raman Scattering in Disordered Semiconductors
Author(s) -
Esser B.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220890238
Subject(s) - raman scattering , scattering , scattering amplitude , amplitude , resonance (particle physics) , electric field , field (mathematics) , physics , condensed matter physics , phonon scattering , phonon , function (biology) , scattering theory , quantum electrodynamics , raman spectroscopy , quantum mechanics , mathematics , evolutionary biology , pure mathematics , biology
Using the Green's function technique a general expression of the one‐phonon resonance Raman scattering cross‐section is derived. This expression may be used to calculate the influence of a slowly varying random field present in the electronic subsystem on the resonance dependence. The theory is applied to the case of a fluctuating gap and internal random electric field. Local scattering amplitudes are obtained and the configurational average of the product of the scattering amplitudes is investigated. It is shown that this two point average effectively reduces to the averaging of the scattering amplitudes with one point distribution functions.