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Dynamic Dielectric Function in the Three‐Band Model for Zero‐Gap Semiconductors in a Magnetic Field
Author(s) -
Kacman P.,
Blinowski J.,
Grynberg M.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220890222
Subject(s) - condensed matter physics , eigenfunction , semiconductor , physics , magnetic field , zero (linguistics) , dielectric function , dielectric , eigenvalues and eigenvectors , band gap , perturbation theory (quantum mechanics) , conduction band , valence (chemistry) , quantum electrodynamics , quantum mechanics , electron , philosophy , linguistics
The energies of the magnetic subbands associated with conduction and valence Γ 8 bands in zero‐gap semiconductors are calculated analytically in the three‐band model corrected by first‐order perturbation theory to account for the effect of higher bands. Based on the obtained eigenvalues and eigenfunctions both, the imaginary and real parts of Γ 8 →Γ 8 intra‐and interband contributions to the dynamic dielectric function (DDF) are evaluated in collisionless approximation. The influence of frequency and magnetic field dependence of DDF on the reflection coefficient in intrinsic and n‐type samples at T = 0 is presented.