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Drift Mobility and Photoconductivity in Amorphous Silicon
Author(s) -
Fuhs W.,
Milleville M.,
Stuke J.
Publication year - 1978
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2220890219
Subject(s) - photoconductivity , amorphous silicon , materials science , transit time , silicon , amorphous solid , time of flight , glow discharge , range (aeronautics) , optoelectronics , electron mobility , yield (engineering) , atomic physics , analytical chemistry (journal) , chemistry , optics , physics , crystalline silicon , plasma , composite material , crystallography , chromatography , transport engineering , quantum mechanics , engineering
Drift mobility and photoconductivity are studied on amorphous silicon (glow discharge type) by conventional time‐of‐flight technique as well as measurements of the response time. The time‐of‐flight experiments yield dispersive transients which do not allow the definition of a transit time. The drift mobility obtained from steady‐state photoconductivity and response time is thermally activated with an energy of 0.13 to 0.16 eV. No indication for a change in transport mechanism is found in the investigated temperature range (100 K < T < 500 K). Longer exposure to light leads to a decrease of the response time, enhancing the recombination via deep lying centres.